MOLECULAR-BEAM EPITAXY OF CDSE AND THE DERIVATIVE ALLOYS ZN1-XCDXSE AND CD1-XMNXSE

被引:19
|
作者
SAMARTH, N
LUO, H
FURDYNA, JK
QADRI, SB
LEE, YR
RAMDAS, AK
OTSUKA, N
机构
[1] USN,RES LAB,WASHINGTON,DC 20375
[2] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907
[3] PURDUE UNIV,DEPT MAT ENGN,W LAFAYETTE,IN 47907
关键词
II-VI compounds; MBE; modulated structures; superlattices; TEM; XRD;
D O I
10.1007/BF02651276
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the epitaxial growth of CdSe, Zn1-x Cd x Se (0 ≤x ≤ 1) and Cd1-x Mn x Se (0 ≤x ≤ 0.8) on (100) GaAs. X-ray diffraction (XRD), electron diffraction and transmission electron microscopy (TEM) indicate that all the epilayers have the cubic (zinc-blende) structure of the GaAs substrate. The energy gaps of these materials were measured using reflectivity measurements. We also report the growth of ZnSe/Zn1-x Cd x Se superlattices. TEM and XRD measurements show that high quality modulated structures with sharp interfaces are possible. © 1990 The Mineral,Metal & Materials Society,Inc.
引用
收藏
页码:543 / 547
页数:5
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