MOLECULAR-BEAM EPITAXY OF CDSE AND THE DERIVATIVE ALLOYS ZN1-XCDXSE AND CD1-XMNXSE

被引：19
|
作者：
SAMARTH, N
LUO, H
FURDYNA, JK
QADRI, SB
LEE, YR
RAMDAS, AK
OTSUKA, N
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
[2] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907
[3] PURDUE UNIV,DEPT MAT ENGN,W LAFAYETTE,IN 47907
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 06期
关键词：
II-VI compounds; MBE; modulated structures; superlattices; TEM; XRD;
D O I：
10.1007/BF02651276
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the epitaxial growth of CdSe, Zn1-x Cd x Se (0 ≤x ≤ 1) and Cd1-x Mn x Se (0 ≤x ≤ 0.8) on (100) GaAs. X-ray diffraction (XRD), electron diffraction and transmission electron microscopy (TEM) indicate that all the epilayers have the cubic (zinc-blende) structure of the GaAs substrate. The energy gaps of these materials were measured using reflectivity measurements. We also report the growth of ZnSe/Zn1-x Cd x Se superlattices. TEM and XRD measurements show that high quality modulated structures with sharp interfaces are possible. © 1990 The Mineral,Metal & Materials Society,Inc.
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页码：543 / 547
页数：5
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