首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
PHOTOCAPACITY PROBING OF SI-SIO2 INTERFACE STATES
被引:0
|
作者
:
KAMIENIECKI, E
论文数:
0
引用数:
0
h-index:
0
机构:
POLISH ACAD SCI,INST PHYS,WARSAW 42,POLAND
POLISH ACAD SCI,INST PHYS,WARSAW 42,POLAND
KAMIENIECKI, E
[
1
]
NITECKI, R
论文数:
0
引用数:
0
h-index:
0
机构:
POLISH ACAD SCI,INST PHYS,WARSAW 42,POLAND
POLISH ACAD SCI,INST PHYS,WARSAW 42,POLAND
NITECKI, R
[
1
]
机构
:
[1]
POLISH ACAD SCI,INST PHYS,WARSAW 42,POLAND
来源
:
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY
|
1978年
/ 23卷
/ 03期
关键词
:
D O I
:
暂无
中图分类号
:
O4 [物理学];
学科分类号
:
0702 ;
摘要
:
引用
收藏
页码:463 / 463
页数:1
相关论文
共 50 条
[21]
ELECTRONIC STATES AT SI-SIO2 INTERFACE INTRODUCED BY IMPLANTATION OF SI IN THERMAL SIO2
KALNITSKY, A
论文数:
0
引用数:
0
h-index:
0
机构:
USA,ELECTR TECHNOL & DEVICE LAB,FT MONMOUTH,NJ 07701
KALNITSKY, A
BOOTHROYD, AR
论文数:
0
引用数:
0
h-index:
0
机构:
USA,ELECTR TECHNOL & DEVICE LAB,FT MONMOUTH,NJ 07701
BOOTHROYD, AR
ELLUL, JP
论文数:
0
引用数:
0
h-index:
0
机构:
USA,ELECTR TECHNOL & DEVICE LAB,FT MONMOUTH,NJ 07701
ELLUL, JP
POINDEXTER, EH
论文数:
0
引用数:
0
h-index:
0
机构:
USA,ELECTR TECHNOL & DEVICE LAB,FT MONMOUTH,NJ 07701
POINDEXTER, EH
CAPLAN, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
USA,ELECTR TECHNOL & DEVICE LAB,FT MONMOUTH,NJ 07701
CAPLAN, PJ
SOLID-STATE ELECTRONICS,
1990,
33
(05)
: 523
-
530
[22]
SPIN-DEPENDENT DLTS OF SI-SIO2 INTERFACE STATES
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
LANG, DV
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(08)
: C351
-
C351
[23]
HYDROGEN INDUCED SURFACE-STATES AT THE SI-SIO2 INTERFACE
KERAMATI, B
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PENN,MOORE SCH ELECT ENGN,DEPT ELECT ENGN & SCI,PHILADELPHIA,PA 19104
UNIV PENN,MOORE SCH ELECT ENGN,DEPT ELECT ENGN & SCI,PHILADELPHIA,PA 19104
KERAMATI, B
ZEMEL, JN
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PENN,MOORE SCH ELECT ENGN,DEPT ELECT ENGN & SCI,PHILADELPHIA,PA 19104
UNIV PENN,MOORE SCH ELECT ENGN,DEPT ELECT ENGN & SCI,PHILADELPHIA,PA 19104
ZEMEL, JN
JOURNAL OF ELECTRONIC MATERIALS,
1979,
8
(05)
: 731
-
731
[24]
CARRIER TRANSPORT IN TAILS OF LOCALIZED STATES AT SI-SIO2 INTERFACE
ARNOLD, E
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS LABS,BRIARCLIFF MANOR,NY 10510
PHILIPS LABS,BRIARCLIFF MANOR,NY 10510
ARNOLD, E
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1974,
ED21
(11)
: 745
-
745
[25]
THE DYNAMICS OF CHARGE TRAPPING INTO INDIVIDUAL SI-SIO2 INTERFACE STATES
KIRTON, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
KIRTON, MJ
UREN, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
UREN, MJ
COLLINS, S
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
COLLINS, S
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1988,
135
(03)
: C137
-
C137
[26]
CRYSTAL ANISOTROPY OF DENSITY OF SURFACE STATES AT SI-SIO2 INTERFACE
KAWAMURA, N
论文数:
0
引用数:
0
h-index:
0
KAWAMURA, N
JAPANESE JOURNAL OF APPLIED PHYSICS,
1966,
5
(03)
: 254
-
&
[27]
TRANSITION RATE OF ELECTRON TUNNELLING INTO SI-SIO2 INTERFACE STATES
JAIN, S
论文数:
0
引用数:
0
h-index:
0
JAIN, S
SEMICONDUCTOR SCIENCE AND TECHNOLOGY,
1988,
3
(09)
: 963
-
965
[28]
TRANSIENT CAPACITANCE MEASUREMENTS OF INTERFACE STATES ON THE INTENTIONALLY CONTAMINATED SI-SIO2 INTERFACE
SCHULZ, M
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER INST,INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER
FRAUNHOFER INST,INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER
SCHULZ, M
KLAUSMANN, E
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER INST,INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER
FRAUNHOFER INST,INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER
KLAUSMANN, E
APPLIED PHYSICS,
1979,
18
(02):
: 169
-
175
[29]
INDIVIDUAL INTERFACE TRAPS AT THE SI-SIO2 INTERFACE
MUELLER, HH
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Applied Physics, University of Erlangen-Nürnberg, Erlangen, D-91058
MUELLER, HH
SCHULZ, M
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Applied Physics, University of Erlangen-Nürnberg, Erlangen, D-91058
SCHULZ, M
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,
1994,
5
(06)
: 329
-
338
[30]
INDIVIDUAL INTERFACE TRAPS AT THE SI-SIO2 INTERFACE
MUELLER, HH
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Erlangen-Nuernberg, Erlangen, Germany
MUELLER, HH
SCHULZ, M
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Erlangen-Nuernberg, Erlangen, Germany
SCHULZ, M
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,
1995,
6
(02)
: 65
-
74
←
1
2
3
4
5
→