CRYSTAL ANISOTROPY OF DENSITY OF SURFACE STATES AT SI-SIO2 INTERFACE

被引：2

|

作者：

KAWAMURA, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1966年 / 5卷 / 03期

关键词：

D O I：

10.1143/JJAP.5.254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：254 / &

相关论文

共 50 条

[1] STRUCTURE OF THE DENSITY OF STATES AT THE SI-SIO2 INTERFACE
PONOMAREV, AN
PRIKHODKO, VG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (03): : 270 - 272
[2] INFLUENCE OF GAMMA-RADIATION ON DENSITY OF SURFACE STATES AT SI-SIO2 INTERFACE
KASSABOV, JD
STOEV, IG
KASCHIEV.SB
DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1973, 26 (01): : 19 - 22
[3] HYDROGEN INDUCED SURFACE STATES AT SI-SIO2 INTERFACE
ZAININGER, KH
WARFIELD, G
PROCEEDINGS OF THE IEEE, 1964, 52 (08) : 972 - &
[4] INTERFACE STATES IN SI-SIO2 INTERFACES
DEULING, H
KLAUSMANN, E
GOETZBERGER, A
SOLID-STATE ELECTRONICS, 1972, 15 (05) : 559 - +
[5] RECONSTRUCTING STATES AT THE SI-SIO2 INTERFACE
WHITE, CT
NGAI, KL
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1412 - 1417
[6] FAST STATES AT SI-SIO2 INTERFACE
KAWAMURA, N
IWASAKI, H
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : C216 - &
[7] HYDROGEN INDUCED SURFACE-STATES AT THE SI-SIO2 INTERFACE
KERAMATI, B
ZEMEL, JN
JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 731 - 731
[8] INTERFACE STATES AND INTERFACE DISORDER IN SI-SIO2 SYSTEM
REVESZ, AG
ZAININGER, KH
EVANS, RJ
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (02) : 197 - +
[9] DETERMINATION OF THE STATE DENSITY AT THE SI-SIO2 INTERFACE
CEROFOLINI, G
FERLA, G
SPADINI, G
THIN SOLID FILMS, 1980, 68 (02) : 315 - 332
[10] THE NEUTRAL LEVEL OF SI-SIO2 INTERFACE STATES
JAIN, S
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C137 - C137

← 1 2 3 4 5 →