POSITION-SENSITIVE DETECTORS USING HYDROGENATED AMORPHOUS-SILICON

被引：3
|
作者：
ALSABBAGH, SK [1 ]
WILSON, JIB [1 ]
MANOOKIAN, WZ [1 ]
机构：
[1] UNIV BASRAH,COLL SCI,BASRAH,IRAQ
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1988年 / 21卷 / 02期
关键词：
POSITION SENSITIVE DETECTORS - STAEBLER-WRONSKI EFFECT;
D O I：
10.1088/0022-3727/21/2/018
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：359 / 363
页数：5
相关论文
共 50 条
  • [21] SELF-CALIBRATING POSITION-SENSITIVE SILICON DETECTORS
    WALTON, JT
    SOMMER, HA
    WOZNIAK, GJ
    PEASLEE, GF
    BOWMAN, DR
    KEHOE, WL
    MORONI, A
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (05) : 1578 - 1583
  • [22] A POSITION-SENSITIVE RADIATION DETECTOR USING A HETEROJUNCTION OF AMORPHOUS AND CRYSTALLINE SILICON
    CHIBA, Y
    ENDO, I
    KUBOTA, M
    OHSUGI, T
    OKADA, S
    ASAI, S
    HIRATA, Y
    KITANO, Y
    OHTA, T
    SEKI, K
    YOKOYAMA, T
    YABE, M
    TAKASAKI, F
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1990, 299 (1-3): : 152 - 156
  • [23] THE STUDY OF HYDROGENATED AMORPHOUS-SILICON USING STEM
    CRAVEN, AJ
    BUGGY, TW
    PATTERSON, A
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (61): : 219 - 222
  • [24] CNDO APPROACH TO AMORPHOUS-SILICON AND TO HYDROGENATED AND FLUORINATED AMORPHOUS-SILICON
    TAGUENAMARTINEZ, J
    SANSORES, LE
    CETINA, EA
    PHYSICAL REVIEW B, 1983, 27 (04): : 2435 - 2438
  • [25] PROPERTIES OF BONDED HYDROGEN IN HYDROGENATED AMORPHOUS-SILICON AND OTHER HYDROGENATED AMORPHOUS-SILICON ALLOYS
    LUCOVSKY, G
    JING, Z
    LU, Z
    LEE, DR
    WHITTEN, JL
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 182 (1-2) : 90 - 102
  • [26] A comparative study of position-sensitive detectors based on Schottky barrier crystalline and amorphous silicon structures
    J. Henry
    J. Livingstone
    Journal of Materials Science: Materials in Electronics, 2001, 12 : 387 - 393
  • [27] A comparative study of position-sensitive detectors based on Schottky barrier crystalline and amorphous silicon structures
    Henry, J
    Livingstone, J
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2001, 12 (07) : 387 - 393
  • [28] CHANNELING DETECTION USING POSITION-SENSITIVE DETECTORS
    DEWACHTER, J
    HENDRICKX, P
    PATTYN, H
    LANGOUCHE, G
    BRIJS, B
    VANDERVORST, W
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 79 (1-4): : 829 - 831
  • [29] HYDROGENATED AMORPHOUS-SILICON AND THIN-FILM ELECTRONICS FOR PIXEL DETECTORS
    PEREZMENDEZ, V
    CHO, G
    DREWERY, J
    FUJIEDA, I
    KAPLAN, S
    QURESHI, S
    ECFA STUDY WEEK ON INSTRUMENTATION TECHNOLOGY FOR HIGH-LUMINOSITY HADRON COLLIDERS, PROCEEDINGS VOLS 1-2, 1989, 89 : 357 - 359
  • [30] DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
    WINER, K
    ANNUAL REVIEW OF MATERIALS SCIENCE, 1991, 21 : 1 - 21
12345