A POSITION-SENSITIVE RADIATION DETECTOR USING A HETEROJUNCTION OF AMORPHOUS AND CRYSTALLINE SILICON

被引：8

作者：

CHIBA, Y

ENDO, I

KUBOTA, M

OHSUGI, T

OKADA, S

ASAI, S

HIRATA, Y

KITANO, Y

OHTA, T

SEKI, K

YOKOYAMA, T

YABE, M

TAKASAKI, F

机构：

[1] HIROSHIMA UNIV,FAC SCI,DEPT MAT SCI,HIROSHIMA 730,JAPAN

[2] JMAC,TOKYO,JAPAN

[3] KEK NAT LAB HIGH ENERGY PHYS,TSUKUBA,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1990年 / 299卷 / 1-3期

关键词：

D O I：

10.1016/0168-9002(90)90766-Y

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have fabricated and tested a new type of Si solid-state detector (SSD), with a heterojunction of hydrogenated amorphous silicon and crystalline silicon. The fabrication process of this SSD is quite simple and is suitable for mass production. We find that this device is sensitive to a minimum-ionizing charged particle and that it becomes position-sensitive when segmented electrodes are evaporated on the amorphous film.

引用

页码：152 / 156

页数：5

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