DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

被引：12

作者：

WINER, K

机构：

[1] NTT Basic Research Laboratories

来源：

ANNUAL REVIEW OF MATERIALS SCIENCE | 1991年 / 21卷

关键词：

DEFECT STRUCTURE; LOCALIZED STATES; A-SI-H GROWTH; CHEMICAL EQUILIBRIA; DEFECT FORMATION;

D O I：

10.1146/annurev.ms.21.080191.000245

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：1 / 21

页数：21

共 50 条

[1] METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
CRANDALL, RS
[J]. PHYSICAL REVIEW B, 1987, 36 (05): : 2645 - 2665
[2] DEFECTS IN HYDROGENATED AMORPHOUS-SILICON AND RELATED ALLOYS
TAYLOR, PC
RANGANATHAN, R
LEE, C
VANDERHEIDEN, ED
OHLSEN, WD
[J]. SOLAR CELLS, 1987, 21 : 452 - 452
[3] ANNEALING OF METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
STUTZMANN, M
JACKSON, WB
TSAI, CC
[J]. PHYSICAL REVIEW B, 1986, 34 (01): : 63 - 72
[4] NATURE OF PHOTOINDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
ZVYAGIN, IP
KUROVA, IA
ORMONT, NN
[J]. SEMICONDUCTORS, 1993, 27 (10) : 942 - 945
[5] CAPACITANCE STUDIES OF DEEP DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
COHEN, JD
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 381 - 386
[6] POSTDEPOSITION RELAXATION OF ELECTRONIC DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
PARSONS, GN
WANG, C
WILLIAMS, MJ
LUCOVSKY, G
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (19) : 1895 - 1897
[7] ANNEALING OF INTRINSIC AND PHOTOINDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
PARSONS, GN
WANG, C
LUCOVSKY, G
[J]. THIN SOLID FILMS, 1990, 193 (1-2) : 577 - 587
[8] CONDUCTIVITY AND QUENCHED-IN DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
BRANZ, HM
CAPUDER, K
LYONS, EH
HAGGERTY, JS
ADLER, D
[J]. PHYSICAL REVIEW B, 1987, 36 (15): : 7934 - 7940
[9] FAST AND SLOW METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
YANG, L
CHEN, L
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (03) : 400 - 402
[10] CONTROL OF DEFECTS AND STRUCTURAL FLUCTUATION IN HYDROGENATED AMORPHOUS-SILICON
MATSUDA, A
[J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1995, 28 : S8 - S14

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