TUNNEL EFFECTS IN DIFFUSED P-N JUNCTIONS IN GALLIUM ANTIMONIDE .2. RADIATIVE RECOMBINATION

被引：0

作者：

STUCHERN.VM

YUNOVICH, AE

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 3卷 / 09期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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引用

页码：78 / +

页数：1

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[11] RADIATIVE RECOMBINATION IN P-N JUNCTIONS IN INDIUM PHOSPHIDE
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[12] STIMULATED RADIATION FROM DUFFUSED P-N JUNCTIONS IN GALLIUM ANTIMONIDE
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[17] DIFFUSED p-n JUNCTIONS IN CdP2.
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[18] GREEN AND RED ELECTROLUMINESCENCES FROM DIFFUSED GALLIUM PHOSPHIDE P-N JUNCTIONS
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[19] INVESTIGATION OF NATURE OF LONG-WAVELENGTH BANDS IN RECOMBINATION RADIATION SPECTRA OF DIFFUSED P-N JUNCTIONS IN GALLIUM ARSENIDE
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