TUNNEL EFFECTS IN DIFFUSED P-N JUNCTIONS IN GALLIUM ANTIMONIDE .2. RADIATIVE RECOMBINATION

被引:0
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作者
STUCHERN.VM
YUNOVICH, AE
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 3卷 / 09期
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O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:78 / +
页数:1
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