共 50 条
- [1] TUNNEL EFFECTS IN DIFFUSED P-N JUNCTIONS IN GALLIUM ANTIMONIDE .I. ELECTRICAL PROPERTIES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (05): : 580 - +
- [2] QUANTUM EFFICIENCY OF RADIATIVE RECOMBINATION IN P-N JUNCTIONS MADE OF GALLIUM ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (08): : 1343 - &
- [3] RECOMBINATION RADIATION OF GALLIUM ANTIMONIDE P-N JUNCTIONS SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (06): : 1538 - &
- [5] TUNNEL-EFFECT RADIATIVE RECOMBINATION IN P-N JUNCTIONS SOVIET PHYSICS JETP-USSR, 1967, 24 (05): : 869 - +
- [8] COPPER DIFFUSED GALLIUM ARSENIDE P-N JUNCTIONS REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1966, 14 (9-10): : 677 - &
- [9] RADIATIVE RECOMBINATION IN SILICON P-N JUNCTIONS PHYSICA STATUS SOLIDI, 1969, 36 (01): : 311 - +
- [10] EFFECT OF DISLOCATIONS ON STRUCTURE OF DIFFUSED P-N JUNCTIONS IN GALLIUM ARSENIDE AND ON RECOMBINATION RADIATION PARAMETERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (06): : 755 - &