ELECTROABSORPTION OPTICAL BISTABILITY IN A WAVE-GUIDE P-I-N DOUBLE HETEROSTRUCTURE WITH A TUNNEL-RESONANT LOAD

被引：0
|
作者：
DOLMANOV, IN
TOLSTIKHIN, VI
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：205 / 209
页数：5
相关论文
共 39 条
  • [31] Efficient collection of photogenerated carriers by inserting double tunnel junctions in III-nitride p-i-n solar cells
    Yao, Yung-Chi
    Tsai, Meng-Tsan
    Huang, Chun-Ying
    Lin, Tai-Yuan
    Sheu, Jinn-Kong
    Lee, Ya-Ju
    APPLIED PHYSICS LETTERS, 2013, 103 (19)
  • [32] Large non-biased all-optical bistability in an electroabsorption modulator using p-i-n-i-p diode and asymmetric Fabry-Perot cavity structure
    Kwon, OK
    Kim, K
    Hyun, KS
    Baek, JH
    Lee, B
    Lee, EH
    APPLIED PHYSICS LETTERS, 1996, 68 (23) : 3216 - 3217
  • [33] S-shaped current-voltage characteristics and bistability in the laser generation spectrum of multiple-barrier p-i-n resonant tunneling devices
    Toropov, AA
    Shubina, TV
    Lebedev, AV
    Meltser, BY
    Nekludov, PV
    Ilinskaia, ND
    Tkatchman, MG
    Kopev, PS
    Cao, SM
    Willander, M
    Holtz, PO
    Bergman, JP
    Monemar, B
    COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 725 - 728
  • [34] ELECTROMAGNETIC-WAVE DAMPING UNMONOTONOUS DEPENDENCE UPON THE INJECTION LEVEL IN P-I-N-DIODE STRUCTURES PLACED IN THE WAVE-GUIDE
    USANOV, DA
    ORLOV, VE
    RADIOTEKHNIKA I ELEKTRONIKA, 1987, 32 (05): : 1129 - 1131
  • [35] Planar GeSn lateral p-i-n resonant-cavity-enhanced photodetectors for short-wave infrared integrated photonics
    Chang, Chen-Yang
    Bansal, Radhika
    Lee, Kuo-Chih
    Sun, Greg
    Soref, Richard
    Cheng, H. H.
    Chang, Guo-En
    OPTICS LETTERS, 2021, 46 (13) : 3316 - 3319
  • [36] Modelization of electrical and optical characteristics of short-wave infrared type I InGaAsBi/InGaAs/InP quantum wells p-i-n detector
    Sfina, N.
    Ammar, I
    Lazzari, J-L
    Said, M.
    PHYSICA SCRIPTA, 2021, 96 (03)
  • [37] Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate
    Tseng, H. H.
    Wu, K. Y.
    Li, H.
    Mashanov, V.
    Cheng, H. H.
    Sun, G.
    Soref, R. A.
    APPLIED PHYSICS LETTERS, 2013, 102 (18)
  • [38] COHERENT RECEIVER FRONT-END MODULE INCLUDING A POLARIZATION DIVERSITY WAVE-GUIDE OIC AND A HIGH-SPEED INGAAS TWIN-DUAL P-I-N PHOTODIODE OEIC BOTH BASED ON INP
    HAMACHER, M
    HEIDRICH, H
    KRUGER, U
    STENZEL, R
    BAUER, JG
    ALBRECHT, H
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (11) : 1234 - 1237
  • [39] EXPERIMENTAL AND THEORETICAL-ANALYSIS OF RESONANT TUNNELING THROUGH A-SI-H/A-SI1-XCX-H DOUBLE-BARRIER IN P-I-N STRUCTURE
    JIANG, YL
    HWANG, HL
    AMORPHOUS SILICON TECHNOLOGY - 1989, 1989, 149 : 687 - 692
1234