共 50 条
- [1] FIELD-DRIFTING RESONANCE TUNNELING THROUGH A-SI-H A-SI1-XCX-H DOUBLE BARRIER IN THE P-I-N STRUCTURE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12): : L2434 - L2437
- [4] Field-drifting resonance tunneling through a-Si:H/a-Si1-xCx:H double barrier in the p-i-n structure Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (12): : 2434 - 2437
- [5] TUNNELING CURRENT IN A-SI-H/A-SI1-XCX-H MULTILAYER STRUCTURES JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L21 - L23
- [6] ELECTROLUMINESCENCE EMITTED BY P-I-N STRUCTURES MADE OF A-SI1-XCX-H SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (04): : 421 - 423
- [7] CORRELATION BETWEEN BULK P-LAYER PROPERTIES OF A-SI1-XCX-H AND PERFORMANCE OF A-SI1-XCX-H/A-SI-H HETEROJUNCTION SOLAR-CELLS SOLAR ENERGY MATERIALS, 1984, 10 (3-4): : 317 - 328