ELECTROABSORPTION OPTICAL BISTABILITY IN A WAVE-GUIDE P-I-N DOUBLE HETEROSTRUCTURE WITH A TUNNEL-RESONANT LOAD

被引:0
|
作者
DOLMANOV, IN
TOLSTIKHIN, VI
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 02期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:205 / 209
页数:5
相关论文
共 39 条
  • [21] Large area double p-i-n heterostructure for signal multiplexing and demultiplexing in the visible range
    Vieira, M.
    Louro, P.
    Fernandes, M.
    Vieira, M. A.
    Fantoni, A.
    Barata, M.
    THIN SOLID FILMS, 2009, 517 (23) : 6435 - 6439
  • [22] HIGH-SPEED DUAL-WAVELENGTH DEMULTIPLEXING AND DETECTION IN A MONOLITHIC SUPERLATTICE P-I-N WAVE-GUIDE DETECTOR ARRAY
    LARSSON, A
    ANDREKSON, PA
    ANDERSSON, P
    ENG, ST
    SALZMAN, J
    YARIV, A
    APPLIED PHYSICS LETTERS, 1986, 49 (05) : 233 - 235
  • [23] ACCURATE DETERMINATION OF WAVE-GUIDE-FED P-I-N PHOTODIODE ABSORPTION
    ERMAN, M
    RENAUD, M
    CAVAILLES, JA
    VINCHANT, JF
    JARRY, P
    GRAVER, C
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1992, 10 (10) : 1409 - 1414
  • [24] A heterostructure for resonant-cavity GaAs p-i-n photodiode with 840-860 nm wavelength
    Rochas, S. S.
    Kolodeznyi, E. S.
    Kozyreva, O. A.
    Voropaev, K. O.
    Sudas, D. P.
    Novikov, I. I.
    Egorov, A. Yu
    INTERNATIONAL CONFERENCE EMERGING TRENDS IN APPLIED AND COMPUTATIONAL PHYSICS 2019 (ETACP-2019), 2019, 1236
  • [25] SURFACE RECOMBINATION IN DRY ETCHED ALGAAS/GAAS DOUBLE HETEROSTRUCTURE P-I-N MESA DIODES
    CORBETT, B
    KELLY, WM
    APPLIED PHYSICS LETTERS, 1993, 62 (01) : 87 - 89
  • [26] ELECTROLUMINESCENCE INVESTIGATIONS OF ELECTRON AND HOLE RESONANT TUNNELING IN P-I-N DOUBLE-BARRIER STRUCTURES
    WHITE, CRH
    EVANS, HB
    EAVES, L
    MARTIN, PM
    HENINI, M
    HILL, G
    PATE, MA
    PHYSICAL REVIEW B, 1992, 45 (16) : 9513 - 9516
  • [27] MONOLITHIC INTEGRATION OF A LASER DIODE AND AN OPTICAL WAVE-GUIDE MODULATOR HAVING A GAAS/ALGAAS QUANTUM-WELL DOUBLE HETEROSTRUCTURE
    TARUCHA, S
    OKAMOTO, H
    APPLIED PHYSICS LETTERS, 1986, 48 (01) : 1 - 3
  • [28] 110-GHZ, 50-PERCENT-EFFICIENCY MUSHROOM MESA WAVE-GUIDE P-I-N PHOTODIODE FOR A 1.55-MU-M WAVELENGTH
    KATO, K
    KOZEN, A
    MURAMOTO, Y
    ITAYA, Y
    NAGATSUMA, T
    YAITA, M
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (06) : 719 - 721
  • [29] ELECTROLUMINESCENCE AND MAGNETOTRANSPORT STUDIES OF A P-I-N SUPERLATTICE DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE
    MAUDE, DK
    KUHN, O
    PORTAL, JC
    HENINI, M
    EAVES, L
    HILL, G
    PATE, MA
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) : 540 - 544
  • [30] INTRINSIC BISTABILITY IN THE ELECTROLUMINESCENCE SPECTRUM AND CURRENT-VOLTAGE CHARACTERISTICS OF TRIPLE-BARRIER P-I-N RESONANT-TUNNELING DEVICES
    HARRISON, PA
    EAVES, L
    MARTIN, PM
    HENINI, M
    BUCKLE, PD
    SKOLNICK, MS
    WHITTAKER, DM
    HILL, G
    SURFACE SCIENCE, 1994, 305 (1-3) : 353 - 357