ONSET OF DEFECTS IN N+ SILICON-DOPED GAAS

被引：0
|
作者：
URE, JW [1 ]
STIRLAND, DJ [1 ]
AUGUSTUS, PD [1 ]
DAVIS, R [1 ]
机构：
[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCHESTER NN12 8EQ,NORTHAMPTONSHIR,ENGLAND
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1979年 / 8卷 / 05期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：711 / 712
页数：2
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