ONSET OF DEFECTS IN N+ SILICON-DOPED GAAS

被引：0
|
作者：
URE, JW [1 ]
STIRLAND, DJ [1 ]
AUGUSTUS, PD [1 ]
DAVIS, R [1 ]
机构：
[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCHESTER NN12 8EQ,NORTHAMPTONSHIR,ENGLAND
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1979年 / 8卷 / 05期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：711 / 712
页数：2
相关论文
共 50 条
  • [41] Intrinsic compensation of silicon-doped AlGaN
    Wagener, MC
    James, GR
    Omnès, F
    APPLIED PHYSICS LETTERS, 2003, 83 (20) : 4193 - 4195
  • [42] Synthesis and Characterization of Silicon-Doped Hydroxyapatite
    Nakata, Kentaro
    Kubo, Takashi
    Numako, Chiya
    Onoki, Takamasa
    Nakahira, Atsushi
    MATERIALS TRANSACTIONS, 2009, 50 (05) : 1046 - 1049
  • [43] PHOTOLUMINESCENCE OF SILICON-DOPED GALLIUM ANTIMONIDE
    BURDIYAN, II
    MIRONOV, IF
    SHRETER, YG
    MALTSEV, SB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (10): : 1734 - &
  • [44] Hydrodynamic simulation of a n+ − n − n+ silicon nanowire
    O. Muscato
    V. Di Stefano
    Continuum Mechanics and Thermodynamics, 2014, 26 : 197 - 205
  • [45] DEFECTS FORMATION IN THE DUAL B+ AND N+ IONS IMPLANTED SILICON
    POPOK, V
    ODZHAEV, V
    HNATOWICZ, V
    KVITEK, J
    SVORCIK, V
    RYBKA, V
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1994, 44 (10) : 949 - 956
  • [46] ELECTROLUMINESCENCE IN AMPHOTERIC SILICON-DOPED GAAS DIODES .1. STEADY-STATE RESPONSE
    BYER, NE
    JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1597 - &
  • [47] Optical properties of silicon-doped (100) GaAs layers grown by molecular-beam epitaxy
    Mokerov, VG
    Fedorov, YV
    Guk, AV
    Galiev, GB
    Strakhov, VA
    Yaremenko, NG
    SEMICONDUCTORS, 1998, 32 (09) : 950 - 952
  • [48] Donor-acceptor recombination in short-period silicon-doped GaAs/AlAs superlattices
    Reshina, II
    Planel', R
    SEMICONDUCTORS, 1998, 32 (07) : 745 - 748
  • [49] SUBBAND STRUCTURE OF 2-DIMENSIONAL ELECTRONS AT DOUBLE SILICON-DOPED ATOMIC LAYERS IN GAAS
    KIDO, G
    YAMADA, S
    MAKIMOTO, T
    PHYSICA B-CONDENSED MATTER, 1992, 177 (1-4) : 433 - 436
  • [50] GAAS-GAXAL1-XAS HETEROSTRUCTURE LASERS WITH AMPHOTERICALLY SILICON-DOPED ACTIVE REGIONS
    DOERBECK, FH
    BLACKNALL, DM
    CARROLL, RL
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 529 - 530
12345