MAGNETOPHONON RESONANCE DUE TO ELECTRONS INJECTED IN P-TYPE INSB

被引：0

作者：

AMIRKHANOV, KI

BASHIROV, RI

ELIZAROV, VA

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 03期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：356 / 357

页数：2

共 50 条

[21] OSCILLATIONS IN COMPENSATED P-TYPE INSB
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[22] RECOMBINATION PROCESSES IN P-TYPE INSB
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[23] PIEZORESISTANCE CONSTANTS OF P-TYPE INSB
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[24] ELECTRON MOBILITY IN P-TYPE INSB
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[25] IMPACT IONIZATION IN P-TYPE INSB
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[26] MAGNETOPHONON EFFECT IN P-INSB
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[27] GALVANOMAGNETIC ANISOTROPY OF P-TYPE INSB
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[29] ANISOTROPY OF SPIN-RESONANCE POSITION IN P-TYPE INSB INVERSION LAYER
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[30] Anisotropy of spin-resonance position in p-type InSb inversion layer
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