MAGNETOPHONON RESONANCE DUE TO ELECTRONS INJECTED IN P-TYPE INSB

被引：0

作者：

AMIRKHANOV, KI

BASHIROV, RI

ELIZAROV, VA

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：356 / 357

页数：2

共 50 条

[31] CYCLOTRON-RESONANCE HARMONICS IN THE CONDUCTION-BAND OF P-TYPE INSB
SAPTSOV, VI
SKOK, EM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (08): : 867 - 868
[32] OSCILLATORY AMPLITUDE AND DAMPING OF TRANSVERSE MAGNETOPHONON RESONANCE FOR N-TYPE INSB
FUJISAWA, I
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (04) : 667 - 672
[33] INFLUENCE OF DEFORMATION ON WEAK EXTREMA OF A MAGNETOPHONON RESONANCE IN N-TYPE INSB
YAKUNIN, MV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (11): : 1258 - 1259
[34] MAGNETOPHONON OSCILLATIONS OF HALL EFFECT IN TYPE INSB
AKSELROD, MM
VILISOV, VA
PODKOLZI.AP
TSIDILKO.IM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1910 - &
[35] Photoexcitation of a shallow acceptor in p-type InSb
Gutsulyak, LM
IvanovOmskii, VI
Tsypishka, DI
SEMICONDUCTORS, 1996, 30 (08) : 768 - 771
[36] ELECTRIC PROPERTIES OF COMPENSATED P-TYPE INSB
NASLEDOV, DN
SMETANNI.YS
TASHKHOD.TK
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 20 (01): : 101 - 108
[37] PHONON DRAG EFFECT IN P-TYPE INSB
BYSZEWSK.P
GRONKOWS.M
KOLODZIE.J
PHYSICA STATUS SOLIDI, 1965, 12 (01): : 329 - &
[38] OSCILLATIONS OF PHOTOMAGNETIC EFFECT IN P-TYPE INSB
GUSEINOV, EK
NASLEDOV, DN
POPOV, YG
SHLYAIFS.M
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1903 - &
[39] HOT CARRIER EFFECTS IN P-TYPE INSB
GOLUB, S
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (06): : 764 - &
[40] ULTRASONIC GENERATION IN p-TYPE InSb.
Bykovskii, Yu.A.
Protasov, E.A.
Toloknov, N.A.
Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1975, 16 (10): : 1979 - 1980

← 1 2 3 4 5 →