THE HIGH ELECTRON-MOBILITY TRANSISTOR

被引：0

作者：

GERING, MZI ^{[1
]}

机构：

[1] CSIR,NATL INST MAT RES,PRETORIA 0001,SOUTH AFRICA

来源：

SOUTH AFRICAN JOURNAL OF SCIENCE | 1988年 / 84卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：78 / 81

页数：4

共 50 条

[41] CALCULATION OF THE ELECTRONIC-PROPERTIES OF A HIGH ELECTRON-MOBILITY TRANSISTOR .1. EQUILIBRIUM CONDITIONS
HOLZ, G
SCHNITTLER, C
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (02): : 635 - 644
[42] THERMAL NOISE IN HIGH ELECTRON-MOBILITY TRANSISTORS
VANDERZIEL, A
WU, EN
[J]. SOLID-STATE ELECTRONICS, 1983, 26 (05) : 383 - 384
[43] HIGH ELECTRON-MOBILITY TRANSISTORS (HEMTS) - A REVIEW
HILL, AJ
LADBROOKE, PH
[J]. GEC JOURNAL OF RESEARCH, 1986, 4 (01): : 1 - 14
[44] SCALING PROPERTIES OF HIGH ELECTRON-MOBILITY TRANSISTORS
KIZILYALLI, IC
HESS, K
LARSON, JL
WIDIGER, DJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1427 - 1433
[45] ELECTRON-MOBILITY IN NEON AT HIGH-DENSITIES
BORGHESANI, AF
BRUSCHI, L
SANTINI, M
TORZO, G
[J]. PHYSICAL REVIEW A, 1988, 37 (12) : 4828 - 4835
[46] NEGATIVE PHOTOCONDUCTIVITY IN HIGH ELECTRON-MOBILITY TRANSISTORS
CHANG, CS
FETTERMAN, HR
NI, D
SOVERO, E
MATHUR, B
HO, WJ
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2233 - 2235
[47] THE NOISE PROPERTIES OF HIGH ELECTRON-MOBILITY TRANSISTORS
BROOKES, TM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) : 52 - 57
[48] Terahertz electrodynamics in high electron-mobility transistors
Evangelisti, F.
[J]. JOURNAL OF APPLIED PHYSICS, 2013, 114 (12)
[49] ELECTRON-MOBILITY IN INP
NAG, BR
DUTTA, GM
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (01): : 119 - 123
[50] MICROWAVE PERFORMANCE OF AN OPTICALLY CONTROLLED ALGAAS/GAAS HIGH ELECTRON-MOBILITY TRANSISTOR AND GAAS-MESFET
SIMONS, RN
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1987, 35 (12) : 1444 - 1455

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