THE HIGH ELECTRON-MOBILITY TRANSISTOR

被引：0

作者：

GERING, MZI ^{[1
]}

机构：

[1] CSIR,NATL INST MAT RES,PRETORIA 0001,SOUTH AFRICA

来源：

SOUTH AFRICAN JOURNAL OF SCIENCE | 1988年 / 84卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：78 / 81

页数：4

共 50 条

[21] TWO-DIMENSIONAL TRANSIENT SIMULATION OF AN IDEALIZED HIGH ELECTRON-MOBILITY TRANSISTOR
WIDIGER, DJ
KIZILYALLI, IC
HESS, K
COLEMAN, JJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) : 1092 - 1102
[22] THE ELECTRONIC-STRUCTURE OF A BACK-GATED HIGH ELECTRON-MOBILITY TRANSISTOR
KELLY, MJ
HAMILTON, A
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (03) : 201 - 207
[23] TWO-DIMENSIONAL NUMERICAL-MODEL FOR THE HIGH ELECTRON-MOBILITY TRANSISTOR
LORET, D
[J]. SOLID-STATE ELECTRONICS, 1987, 30 (11) : 1197 - 1203
[24] EFFECT OF TRAPS ON LOW-TEMPERATURE HIGH ELECTRON-MOBILITY TRANSISTOR CHARACTERISTICS
CHI, JY
HOLMSTROM, RP
SALERNO, JP
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) : 381 - 384
[25] CHARGE CONTROL IN A LASER PROCESSED SUPERLATTICE HIGH ELECTRON-MOBILITY TRANSISTOR (LPHEMT)
HALKIAS, G
CHRISTOU, A
DUMAS, JM
[J]. SOLID-STATE ELECTRONICS, 1989, 32 (11) : 979 - 981
[26] DRY ETCH PROCESSING OF GAAS/-ALGAAS HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES
PEARTON, SJ
REN, F
LOTHIAN, JR
FULLOWAN, TR
KOPF, RF
CHAKRABARTI, UK
HUI, SP
EMERSON, AB
KOSTELAK, RL
PEI, SS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (05): : 2487 - 2496
[27] TWO-DIMENSIONAL NUMERICAL-ANALYSIS OF THE HIGH ELECTRON-MOBILITY TRANSISTOR
WIDIGER, D
HESS, K
COLEMAN, JJ
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 266 - 269
[28] A MICROWAVE-POWER DOUBLE-HETEROJUNCTION HIGH ELECTRON-MOBILITY TRANSISTOR
HIKOSAKA, K
HIRACHI, Y
MIMURA, T
ABE, M
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) : 341 - 343
[29] A HIGH-SPEED 1-KBIT HIGH ELECTRON-MOBILITY TRANSISTOR STATIC RAM
SHENG, NH
WANG, HT
LEE, CP
SULLIVAN, GJ
MILLER, DL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) : 1670 - 1675
[30] AN ANALYTICAL AND COMPUTER-AIDED MODEL OF THE ALGAAS/GAAS HIGH ELECTRON-MOBILITY TRANSISTOR
WANG, GW
KU, WH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 657 - 663

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