NEGATIVE PHOTOCONDUCTIVITY IN HIGH ELECTRON-MOBILITY TRANSISTORS

被引：16

作者：

CHANG, CS ^{[1
]}

FETTERMAN, HR ^{[1
]}

NI, D ^{[1
]}

SOVERO, E ^{[1
]}

MATHUR, B ^{[1
]}

HO, WJ ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 26期

关键词：

D O I：

10.1063/1.98950

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2233 / 2235

页数：3

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