NEGATIVE PHOTOCONDUCTIVITY (NPC) IN HIGH ELECTRON-MOBILITY TRANSISTORS AND ITS RELATIONSHIP TO SUBSTRATE DEFECTS

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作者：

PAPAIOANNOU, G

KIRIAKIDIS, G

TSENG, W

CHRISTOU, A

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来源：

SEMI-INSULATING III-V MATERIALS, MALMO 1988 | 1988年

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中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

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页码：283 / 287

页数：5

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