INHOMOGENEITIES IN ELECTRICAL PROPERTIES OF GALLIUM ARSENIDE CRYSTALS

被引：3

|

作者：

BRICE, JC

HUNT, RE

KING, GD

WRIGHT, HC

机构：

来源：

SOLID-STATE ELECTRONICS | 1966年 / 9卷 / 09期

关键词：

D O I：

10.1016/0038-1101(66)90035-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：853 / &

相关论文

共 50 条

[31] EFFECT OF HEAT TREATMENT ON GALLIUM ARSENIDE CRYSTALS .3. ELECTRICAL PROPERTIES OF THERMALLY CONVERTED P-TYPE CRYSTALS
IKOMA, H
TOYAMA, M
JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (04) : 376 - &
[32] ELECTRICAL PROPERTIES OF GALLIUM PHOSPHIDE-GALLIUM ARSENIDE P-N HETEROJUNCTIONS
ALFEROV, ZI
KOROLKOV, VI
TRUKAN, MK
SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (12): : 2813 - +
[33] BONDING OF GALLIUM-ARSENIDE CRYSTALS
CHU, TL
SMELTZER, RK
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (06) : 846 - 846
[34] IMPURITY PHOTOCONDUCTIVITY OF GALLIUM ARSENIDE CRYSTALS
KOLCHANOVA, NM
NASLEDOV, DN
MIRDZHAL.MA
IBRAGIMO.VY
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (02): : 294 - +
[35] POLARITY OF GALLIUM ARSENIDE SINGLE CRYSTALS
WHITE, JG
ROTH, WC
JOURNAL OF APPLIED PHYSICS, 1959, 30 (06) : 946 - 947
[36] DISLOCATION DECORATION IN GALLIUM ARSENIDE CRYSTALS
MILVIDSK.MG
OSVENSKI.VB
YUGOVA, TG
SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (11): : 2791 - +
[37] COILED CRYSTALS OF GALLIUM-ARSENIDE
ADDAMIANO, A
JOURNAL OF CRYSTAL GROWTH, 1971, 11 (03) : 351 - +
[38] PRECIPITATES IN GALLIUM ARSENIDE SINGLE CRYSTALS
ECKHARDT, G
JOURNAL OF APPLIED PHYSICS, 1962, 33 (03) : 1016 - &
[39] PHOTOLUMINESCENCE OF UNDOPED GALLIUM ARSENIDE CRYSTALS
BAGAEV, VS
PADUCHIK.LI
SOVIET PHYSICS SOLID STATE,USSR, 1970, 11 (08): : 1832 - &
[40] LIFETIME IN SINGLE CRYSTALS OF GALLIUM ARSENIDE
DUDENKOVA, AV
NIKITIN, VV
SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (10): : 2432 - +

← 1 2 3 4 5 →