NOISE PROPERTIES OF N-TYPE GOLD-DOPED SILICON

被引：12

作者：

COLLIGAN, MB

VANVLIET, KM

机构：

来源：

PHYSICAL REVIEW | 1968年 / 171卷 / 03期

关键词：

D O I：

10.1103/PhysRev.171.881

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：881 / &

共 50 条

[21] SOME INVESTIGATIONS OF CURRENT-VOLTAGE CHARACTERISTICS OF GOLD-DOPED N-TYPE GERMANIUM
KUROVA, IA
VRANA, M
BERNDT, P
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (12): : 1530 - +
[22] RECOMBINATION LIFETIMES IN GOLD-DOPED PARA TYPE SILICON
WENAAS, EP
LEADON, RE
NABER, JA
MALLON, CE
JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) : 2893 - &
[23] PHOTOCONDUCTIVITY IN GOLD-DOPED SILICON
NEWMAN, R
PHYSICAL REVIEW, 1954, 94 (06): : 1530 - 1531
[24] SELECTIVE PROPERTIES OF SILICON DIODES WITH A GOLD-DOPED BASE
AVAKYANT.GM
ALIMOVA, LI
MURGIN, VI
SKRIPNIK.YS
TSERFAS, RA
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1965, 10 (11): : 1772 - &
[25] INFLUENCE OF EXTERNAL PERTURBATIONS ON BEHAVIOUR OF STATIONARY ELECTRICAL DOMAINS IN GOLD-DOPED N-TYPE GE
KUROVA, IA
VRANA, M
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (01): : 269 - &
[26] NEGATIVE PHOTOCONDUCTIVITY IN GOLD-DOPED SILICON
BARRETT, JR
GERHARD, GC
JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 900 - &
[27] AMPLIFICATION AND OSCILLATION PROPERTIES OF SILICON DIODES WITH A GOLD-DOPED BASE
TSERFAS, RA
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1965, 10 (11): : 1775 - &
[28] ELECTRICAL PROPERTIES OF GOLD-DOPED DIFFUSED SILICON COMPUTER DIODES
BAKANOWSKI, AE
FORSTER, JH
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 87 - 104
[29] DOUBLE INJECTION IN GOLD-DOPED SILICON
VARLAMOV, IV
SONDAEVS.IA
SONDAEVS.VP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (03): : 375 - &
[30] NEGATIVE PHOTOCONDUCTIVITY OF GOLD-DOPED SILICON
BYKOVSKII, YA
VINOGRAD.KN
ZUEV, VV
KOZYREV, YP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (07): : 933 - +

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