RESULTS OF ION-IMPLANTATION INTO SILICON IN THE 100 MEV RANGE .2. ELECTRICAL-PROPERTIES

被引：0
|
作者：
FAHRNER, WR
HEIDEMANN, K
SCHOTTLE, P
机构：
[1] UNIV DORTMUND,DEPT PHYS,D-4600 DORTMUND 50,FED REP GER
[2] ROBERT BOSCH GMBH,DEPT FPH2,STUTTGART,FED REP GER
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 71卷 / 01期
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：121 / 125
页数：5
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