THERMALLY AND LIGHT-INDUCED INSTABILITIES IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON

被引：7

作者：

BANERJEE, R ^{[1
]}

FURUI, T ^{[1
]}

OKUSHI, H ^{[1
]}

TANAKA, K ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 19期

关键词：

D O I：

10.1063/1.100389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1829 / 1831

页数：3

共 50 条

[1] LIGHT-INDUCED DEFECTS IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
OKUSHI, H
YAMASAKI, S
TANAKA, K
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1992, 141 (1-3) : 176 - 187
[2] LIGHT-INDUCED CONDUCTIVITY CHANGES IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
YOON, JH
KIM, MS
LEE, CC
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 636 - 638
[3] DEFECT FROZEN PHENOMENA IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
OSAKA, Y
NASU, H
AKAMATSU, C
HAYASHI, R
[J]. NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1989, 97 (07): : 699 - 705
[4] THICKNESS DEPENDENCE OF THE PHOTOCONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
SOLOMON, I
BRODSKY, MH
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4548 - 4549
[5] LIGHT-INDUCED-CHANGES OF GAP-STATE PROFILE IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
OKUSHI, H
FURUI, T
BANERJEE, R
TANAKA, K
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (05) : 439 - 441
[6] LIGHT-INDUCED EFFECTS ON DOPED-HYDROGENATED AND UNDOPED-HYDROGENATED AMORPHOUS-SILICON
PARK, JS
HAN, MK
LEE, CH
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 2107 - 2112
[7] DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
HVAM, JM
BRODSKY, MH
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (05) : 371 - 374
[8] SCHOTTKY BARRIERS ON PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON - THE EFFECTS OF TUNNELING
JACKSON, WB
NEMANICH, RJ
THOMPSON, MJ
WACKER, B
[J]. PHYSICAL REVIEW B, 1986, 33 (10): : 6936 - 6945
[9] STAEBLER-WRONSKI EFFECT IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
KAZANSKII, AG
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (08): : 915 - 917
[10] CONTACT RESISTANCE TO UNDOPED AND PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON FILMS
KANICKI, J
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (20) : 1943 - 1945

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