LIGHT-INDUCED-CHANGES OF GAP-STATE PROFILE IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON

被引：3

|

作者：

OKUSHI, H

FURUI, T

BANERJEE, R

TANAKA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.100945

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：439 / 441

页数：3

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