MOLECULAR-DYNAMICS SIMULATION OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF THE SILICON (100) SURFACE

被引：55
|
作者：
GAWLINSKI, ET [1 ]
GUNTON, JD [1 ]
机构：
[1] TEMPLE UNIV,CTR ADV COMP SCI,PHILADELPHIA,PA 19122
来源：
PHYSICAL REVIEW B | 1987年 / 36卷 / 09期
关键词：
D O I：
10.1103/PhysRevB.36.4774
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4774 / 4781
页数：8
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