MOLECULAR-BEAM EPITAXIAL-GROWTH AND SURFACE-DIFFUSION

被引：93
|
作者：
KESSLER, DA
LEVINE, H
SANDER, LM
机构：
[1] UNIV CALIF SAN DIEGO,INST NONLINEAR SCI,LA JOLLA,CA 92093
[2] UNIV CALIF SAN DIEGO,DEPT PHYS,LA JOLLA,CA 92093
来源：
PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 01期
关键词：
D O I：
10.1103/PhysRevLett.69.100
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We investigate the statistical properties of the surface of thin films grown by molecular-beam epitaxy (MBE). We present and analyze a simple model of MBE growth which incorporates surface diffusion and deposition in a physically correct manner. The short-time behavior does not correspond to that predicted by the continuum model of Villain, Das Sarma, and others. At long times, the model is governed by Kardar-Parisi-Zhang dynamics.
引用
收藏
页码：100 / 103
页数：4
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