HOT-ELECTRON EMISSION FROM SILICON DIOXIDE

被引：0
|
作者：
NING, TH [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1977年 / 22卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：710 / 710
页数：1
相关论文
共 50 条
  • [41] HOT-ELECTRON PICTURE OF LIGHT-EMISSION FROM TUNNEL-JUNCTIONS
    KIRTLEY, JR
    THEIS, TN
    TSANG, JC
    DIMARIA, DJ
    PHYSICAL REVIEW B, 1983, 27 (08): : 4601 - 4611
  • [42] Imaging hot-electron emission from metal-oxide-semiconductor structures
    Phys Rev Lett, 17 (3200):
  • [43] Imaging hot-electron emission from metal-oxide-semiconductor structures
    Mankos, M
    Tromp, RM
    Reuter, MC
    Cartier, E
    PHYSICAL REVIEW LETTERS, 1996, 76 (17) : 3200 - 3203
  • [44] HOT-ELECTRON EMISSION FROM COMPOSITE METAL-INSULATOR MICROPOINT CATHODES
    LATHAM, RV
    MOUSA, MS
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1986, 19 (04) : 699 - 713
  • [45] A NEW PERSPECTIVE ON THE HOT-ELECTRON EMISSION FROM METAL-INSULATOR MICROSTRUCTURES
    MOUSA, MS
    SURFACE SCIENCE, 1990, 231 (1-2) : 149 - 159
  • [46] Avalanche ballistic electron emission microscopy with single hot-electron sensitivity
    Heller, ER
    Tivarus, C
    Pelz, JP
    APPLIED PHYSICS LETTERS, 2003, 83 (14) : 2841 - 2843
  • [47] Superconducting hot-electron bolometer: from the discovery of. hot-electron phenomena to practical applications
    Shurakov, A.
    Lobanov, Y.
    Goltsman, G.
    SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2016, 29 (02):
  • [48] Reliability of ultrathin silicon dioxide under combined substrate hot-electron and constant voltage tunneling stress
    Vogel, EM
    Suehle, JS
    Edelstein, MD
    Wang, B
    Chen, Y
    Bernstein, JB
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (06) : 1183 - 1191
  • [49] Silicon hot-electron bolometers with single-electron transistor readout
    Stevenson, TR
    Hsieh, WT
    Mitchell, RR
    Isenberg, HD
    Stahle, CM
    Cao, NT
    Schneider, G
    Travers, DE
    Moseley, SH
    Wollack, EJ
    Henry, RM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2006, 559 (02): : 591 - 593
  • [50] Reliability of ultra-thin silicon dioxide under substrate hot-electron, substrate hot-hole and tunneling stress
    Vogel, EM
    Edelstein, MD
    Suehle, JS
    MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) : 73 - 83
12345