HOT-ELECTRON EMISSION FROM SILICON DIOXIDE

被引：0
|
作者：
NING, TH [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1977年 / 22卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：710 / 710
页数：1
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