Imaging hot-electron emission from metal-oxide-semiconductor structures

被引：10

作者：

Mankos, M

Tromp, RM

Reuter, MC

Cartier, E

机构：

[1] IBM T. J. Watson Research Center, Yorktown Heigths, NY, 10598

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.76.3200

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have used hot electrons emitted into vacuum from biased metal-oxide-semiconductor (MOS) structures to form a direct image of the spatial emission distribution. Hot-electron emission microscopy allows us to investigate the emission characteristics of biased MOS structures and its correlation with morphology, as well as time-dependent prebreakdown phenomena at high spatial resolution (similar to 20 nm). We show that different oxide structures have very different emission, as well as prebreakdown characteristics.

引用

页码：3200 / 3203

页数：4

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