Imaging hot-electron emission from metal-oxide-semiconductor structures

被引：10
|
作者：
Mankos, M
Tromp, RM
Reuter, MC
Cartier, E
机构：
[1] IBM T. J. Watson Research Center, Yorktown Heigths, NY, 10598
来源：
PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 17期
关键词：
D O I：
10.1103/PhysRevLett.76.3200
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have used hot electrons emitted into vacuum from biased metal-oxide-semiconductor (MOS) structures to form a direct image of the spatial emission distribution. Hot-electron emission microscopy allows us to investigate the emission characteristics of biased MOS structures and its correlation with morphology, as well as time-dependent prebreakdown phenomena at high spatial resolution (similar to 20 nm). We show that different oxide structures have very different emission, as well as prebreakdown characteristics.
引用
收藏
页码：3200 / 3203
页数：4
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