HOT-ELECTRON EMISSION FROM SILICON DIOXIDE

被引：0

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作者：

NING, TH ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1977年 / 22卷 / 06期

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D O I：

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中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：710 / 710

页数：1

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