OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON

被引：136
|
作者：
SANDERS, IR
DOBSON, PS
机构：
来源：
PHILOSOPHICAL MAGAZINE | 1969年 / 20卷 / 167期
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D O I：
10.1080/14786436908228058
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：881 / &
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