Structure of tin-vacancy defects in silicon

被引：8
|
作者：
Kaukonen, M
Jones, R [1 ]
Öberg, S
Briddon, PR
机构：
[1] Univ Exeter, Dept Phys, Exeter EX4 4QL, Devon, England
[2] Univ Lulea, Dept Math, S-95187 Lulea, Sweden
[3] Newcastle Univ, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2002年 / 186卷
关键词：
Sn; vacancies; diffusion; ab initio theory;
D O I：
10.1016/S0168-583X(01)00888-6
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Tin-vacancy complexes Sn-n-V-m, n less than or equal to 2, m less than or equal to 2, are investigated by first-principles cluster and supercell methods. Their structures, spin-densities, electrical levels and formation energies are reported, It is found that the till-vacancy interaction is short ranged and consequently the diffusion mechanism of Sn is Somewhat different from that of the E-center. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：24 / 29
页数：6
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