ON THE NATURE OF POINT-DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICON

被引：32
|
作者：
TAN, TY
GOSELE, U
MOREHEAD, FF
机构：
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1983年 / 31卷 / 02期
关键词：
D O I：
10.1007/BF00616312
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：97 / 108
页数：12
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