PHOTOELECTRIC PROPERTIES OF SELENIUM DOPED P+-N-N+ SILICON STRUCTURE

被引：0

作者：

ARUTYUNYAN, VM

BARSEGHYAN, RS

GRIGORYAN, GE

MKHIKYAN, VA

SEMERDJIAN, BO

机构：

来源：

INFRARED PHYSICS | 1989年 / 29卷 / 2-4期

关键词：

D O I：

10.1016/0020-0891(89)90111-5

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：685 / 688

页数：4

共 50 条

[1] BREAKDOWN OF SILICON P+-N-N+ DIODES
KONAKOVA, RV
MELNIKOVA, YS
MOZDOR, EV
FAINBERG, VI
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (10): : 1109 - 1112
[2] BREAKDOWN OF SILICON P+-N-N+ DIODES
KONAKOVA, RV
MELNIKOVA, YS
MOZDOR, LV
FINEBERG, VI
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1989, 113 (01): : 215 - 221
[3] INFLUENCE OF UNIAXIAL PRESSURE ON PROPERTIES OF P+-N-N+ AND P+-N-P+ SILICON STRUCTURES
SULTANOV, NA
USMANOV, KU
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (08): : 1018 - 1020
[4] FORWARD TRANSIENT CHARACTERISTICS OF GOLD-DOPED SILICON P+-N-N+ DIODES
PETERS, DW
SHIPLEY, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (11) : 852 - +
[5] CURRENT FILAMENT IN SILICON P+-N-N+ DIODES
SHCHERBINA, LV
TORCHINSKAYA, TV
[J]. UKRAINSKII FIZICHESKII ZHURNAL, 1983, 28 (02): : 268 - 271
[6] PHOTOELECTRIC PROPERTIES OF SELENIUM-DOPED SILICON
SULTANOV, NA
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (09): : 1148 - 1149
[7] SMALL-SIGNAL IMPEDANCE OF GOLD-DOPED P+-N-N+ SILICON DIODES
PETERS, DW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (09) : 828 - &
[8] COMPARISON BETWEEN N+-P-P+ AND P+-N-N+ SILICON IMPATT DIODES
LEE, CM
HADDAD, GI
LOMAX, RJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (02) : 137 - 141
[9] PHOTOELECTRIC PROPERTIES OF P-N JUNCTIONS IN SILICON-DOPED GALLIUM ARSENIDE
ALFEROV, ZI
ZIMOGORO.NS
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (03): : 385 - &
[10] APPROXIMATE COMPARISON BETWEEN N+-P-P+ AND P+-N-N+ SILICON TRAPATT DIODES
HADDAD, GI
LEE, CM
SCHROEDER, WE
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (07) : 501 - 502

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