PHOTOELECTRIC PROPERTIES OF P-N JUNCTIONS IN SILICON-DOPED GALLIUM ARSENIDE

被引：0

作者：

ALFEROV, ZI

ZIMOGORO.NS

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1969年 / 3卷 / 03期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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引用

页码：385 / &

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[1] MECHANISM OF RADIATIVE RECOMBINATION IN SILICON-DOPED GALLIUM ARSENIDE EPITAXIAL P-N STRUCTURES
ALFEROV, ZI
GARBUZOV, DZ
MOROZOV, EP
TRETYAKO.DN
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (04): : 471 - &
[2] SOME PHOTOELECTRIC PROPERTIES OF GALLIUM PHOSPHIDE-GALLIUM ARSENIDE P-N HETEROJUNCTIONS
ALFEROV, ZI
ZIMOGORO.NS
TRUKAN, MK
TUCHKEVI.VM
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (04): : 990 - +
[3] COPPER DIFFUSED GALLIUM ARSENIDE P-N JUNCTIONS
FURUKAWA, Y
KAJIYAMA, K
AOKI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (01) : 39 - &
[4] AVALANCHE BREAKDOWN OF GALLIUM ARSENIDE P-N JUNCTIONS
HALL, R
LECK, JH
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (06) : 529 - &
[5] ELECTRIC BREAKDOWN IN GALLIUM ARSENIDE P-N JUNCTIONS
NASLEDOV, DN
TSARENKOV, BV
[J]. SOVIET PHYSICS-SOLID STATE, 1963, 5 (04): : 862 - 867
[6] COPPER DIFFUSED GALLIUM ARSENIDE P-N JUNCTIONS
FURUKAWA, Y
KAJIYAMA, K
AOKI, T
[J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1966, 14 (9-10): : 677 - &
[7] PHOTOELECTRIC PROPERTIES OF ALLOY P-N JUNCTIONS IN SILICON CARBIDE
KHOLUYANOV, GF
[J]. SOVIET PHYSICS-SOLID STATE, 1961, 2 (08): : 1722 - 1726
[8] AMPHOTERICALLY SILICON-DOPED GALLIUM ARSENIDE LASER
AHN, BH
TRUSSELL, CW
SHURTZ, RR
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (10) : 408 - &
[9] CURRENT-VOLTAGE CHARACTERISTICS OF P-N JUNCTIONS IN HEAVILY DOPED GALLIUM ARSENIDE
VUL, BM
ZAVARITSKAYA, EI
SHOTOV, AP
[J]. SOVIET PHYSICS-SOLID STATE, 1964, 6 (05): : 1146 - 1151
[10] Analysis of electroluminescence spectra of silicon and gallium arsenide p-n junctions in avalanche breakdown
Lahbabi, M
Ahaitouf, A
Fliyou, M
Abarkan, E
Charles, JP
Bath, A
Hoffmann, A
Kerns, SE
Kerns, DV
[J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (04) : 1822 - 1828

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