FORWARD TRANSIENT CHARACTERISTICS OF GOLD-DOPED SILICON P+-N-N+ DIODES

被引：3

|

作者：

PETERS, DW

SHIPLEY, M

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1968年 / ED15卷 / 11期

关键词：

D O I：

10.1109/T-ED.1968.16526

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：852 / +

页数：1

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