APPLICATIONS OF X-RAY TRIPLE CRYSTAL DIFFRACTOMETRY TO STUDIES ON THE DIFFUSION-INDUCED DEFECTS IN SILICON-CRYSTALS

被引：34
|
作者：
IIDA, A
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1979年 / 54卷 / 02期
关键词：
Compendex;
D O I：
10.1002/pssa.2210540235
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
SEMICONDUCTING SILICON
引用
收藏
页码：701 / 706
页数：6
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