APPLICATIONS OF X-RAY TRIPLE CRYSTAL DIFFRACTOMETRY TO STUDIES ON THE DIFFUSION-INDUCED DEFECTS IN SILICON-CRYSTALS

被引：34
|
作者：
IIDA, A
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1979年 / 54卷 / 02期
关键词：
D O I：
10.1002/pssa.2210540235
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：701 / 706
页数：6
相关论文
共 50 条
  • [1] X-RAY DOUBLE AND TRIPLE CRYSTAL DIFFRACTOMETRY OF SILICON-CRYSTALS WITH SMALL DEFECTS
    HOLY, V
    KUBENA, J
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1992, 170 (01): : 9 - 25
  • [2] X-RAY TRIPLE-CRYSTAL DIFFRACTOMETRY OF DEFECTS IN EPITAXIAL LAYERS
    HOLY, V
    WOLF, K
    KASTNER, M
    STANZL, H
    GEBHARDT, W
    [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1994, 27 : 551 - 557
  • [3] X-RAY OBSERVATIONS OF DIFFUSION-INDUCED DISLOCATIONS IN SILICON
    SCHWUTTKE, GH
    QUEISSER, HJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (04) : 1540 - &
  • [4] X-RAY ANALYSIS OF DIFFUSION-INDUCED DEFECTS IN GALLIUM ARSENIDE
    SCHWUTTKE, GH
    RUPPRECHT, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 167 - +
  • [5] Effect of defects in the monochromator on profiles of a triple-crystal x-ray diffractometry
    Kyslovskyy, E. M.
    Reshetnyk, O. V.
    Vladimirova, T. P.
    Molodkin, V. B.
    Olikhovskii, S. J.
    Sheludchenko, B. V.
    Seredenko, R. F.
    Skakunova, O. S.
    [J]. METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2007, 29 (05): : 701 - 710
  • [6] FRACTURE STUDIES IN SILICON CRYSTALS BY X-RAY PENDELLOSUNG FRINGES AND DOUBLE-CRYSTAL DIFFRACTOMETRY
    WEISSMANN, S
    TSUNEKAWA, Y
    KANNAN, VC
    [J]. METALLURGICAL TRANSACTIONS, 1973, 4 (01): : 376 - 377
  • [7] SEPARATE MEASUREMENTS OF DYNAMICAL AND KINEMATICAL X-RAY DIFFRACTIONS FROM SILICON-CRYSTALS WITH A TRIPLE CRYSTAL DIFFRACTOMETER
    IIDA, A
    KOHRA, K
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (02): : 533 - 542
  • [8] The X-ray triple crystal diffractometry of silicon monocrystals with ordered dislocation structure
    Novikov, NN
    Shevtsiv, IV
    Shvidky, VA
    Teselko, PO
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 161 (01): : 35 - 43
  • [9] CHARACTERIZATION OF BORON IMPLANTED SILICON BY X-RAY TRIPLE-CRYSTAL DIFFRACTOMETRY
    ZAUMSEIL, P
    WINTER, U
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 120 (01): : 67 - 75
  • [10] Double- and triple-crystal X-ray diffractometry of microdefects in silicon
    Molodkin, V. B.
    Olikhovskii, S. I.
    Kyslovskyy, Ye. M.
    Len, E. G.
    Reshetnyk, O. V.
    Vladimirova, T. P.
    Lizunov, V. V.
    Lizunova, S. V.
    [J]. SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2010, 13 (04) : 353 - 356
12345