The X-ray triple crystal diffractometry of silicon monocrystals with ordered dislocation structure

被引：0
|
作者：
Novikov, NN
Shevtsiv, IV
Shvidky, VA
Teselko, PO
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1997年 / 161卷 / 01期
关键词：
D O I：
10.1002/1521-396X(199705)161:1<35::AID-PSSA35>3.0.CO;2-B
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An attempt was made to find out the anisotropy of X-ray diffraction from an ordered dislocation structure with aid of TCD. The increase of the diffuse component of scattering was observed when the scattered plane was perpendicular to the direction of dislocations dissipating radiation. The quantity of this effect depended on the density of dislocations and, probably, on the direction of their Burgers vectors.
引用
收藏
页码：35 / 43
页数：9
相关论文
共 50 条
  • [1] Determination of total reflectivity and diffraction parameters of structure perfection of silicon monocrystals by triple-crystal X-ray diffractometry
    Novikov, NN
    Sushko, VG
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1998, 168 (02): : 359 - 366
  • [2] CHARACTERIZATION OF BORON IMPLANTED SILICON BY X-RAY TRIPLE-CRYSTAL DIFFRACTOMETRY
    ZAUMSEIL, P
    WINTER, U
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 120 (01): : 67 - 75
  • [3] Double- and triple-crystal X-ray diffractometry of microdefects in silicon
    Molodkin, V. B.
    Olikhovskii, S. I.
    Kyslovskyy, Ye. M.
    Len, E. G.
    Reshetnyk, O. V.
    Vladimirova, T. P.
    Lizunov, V. V.
    Lizunova, S. V.
    [J]. SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2010, 13 (04) : 353 - 356
  • [4] Integral triple-crystals' X-ray diffractometry of monocrystals containing microdefects
    Nemoshkalenko, VV
    Molodkin, VB
    Kislovs'ky, YM
    Olikhovs'ky, SI
    Gryshchenko, TA
    Kogut, MT
    Pervak, KV
    [J]. METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2000, 22 (02): : 42 - 50
  • [5] X-RAY DOUBLE AND TRIPLE CRYSTAL DIFFRACTOMETRY OF SILICON-CRYSTALS WITH SMALL DEFECTS
    HOLY, V
    KUBENA, J
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1992, 170 (01): : 9 - 25
  • [6] Effect of duration of thermal diffusion of boron on silicon structure studied by triple-crystal X-ray diffractometry
    Petrakov, AP
    Shilov, SV
    Zainulin, GG
    [J]. CRYSTALLOGRAPHY REPORTS, 2000, 45 (06) : 1013 - 1017
  • [7] X-RAY DOUBLE AND TRIPLE-CRYSTAL DIFFRACTOMETRY OF MOSAIC STRUCTURE IN HETEROEPITAXIAL LAYERS
    HOLY, V
    KUBENA, J
    ABRAMOF, E
    LISCHKA, K
    PESEK, A
    KOPPENSTEINER, E
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) : 1736 - 1743
  • [8] X-RAY TRIPLE-CRYSTAL DIFFRACTOMETRY OF DEFECTS IN EPITAXIAL LAYERS
    HOLY, V
    WOLF, K
    KASTNER, M
    STANZL, H
    GEBHARDT, W
    [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1994, 27 : 551 - 557
  • [9] Effect of defects in the monochromator on profiles of a triple-crystal x-ray diffractometry
    Kyslovskyy, E. M.
    Reshetnyk, O. V.
    Vladimirova, T. P.
    Molodkin, V. B.
    Olikhovskii, S. J.
    Sheludchenko, B. V.
    Seredenko, R. F.
    Skakunova, O. S.
    [J]. METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2007, 29 (05): : 701 - 710
  • [10] APPLICATIONS OF X-RAY TRIPLE CRYSTAL DIFFRACTOMETRY TO STUDIES ON THE DIFFUSION-INDUCED DEFECTS IN SILICON-CRYSTALS
    IIDA, A
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1979, 54 (02): : 701 - 706
12345