X-RAY DOUBLE AND TRIPLE-CRYSTAL DIFFRACTOMETRY OF MOSAIC STRUCTURE IN HETEROEPITAXIAL LAYERS

被引：86
|
作者：
HOLY, V
KUBENA, J
ABRAMOF, E
LISCHKA, K
PESEK, A
KOPPENSTEINER, E
机构：
[1] KEPLER UNIV, INST OPTOELECTRON, A-4040 LINZ, AUSTRIA
[2] KEPLER UNIV, INST SEMICOND PHYS, A-4040 LINZ, AUSTRIA
[3] INST PESQUISAS ESPACIAIS, BR-12201 SAO JOSE DOS CAMPOS, SP, BRAZIL
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 03期
关键词：
D O I：
10.1063/1.354828
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
X-ray diffraction in thin layers containing small randomly placed defects is described by means of the kinematical diffraction theory and optical coherence formalism. The method enables us to calculate both the diffracted intensity and its angular distribution, so that it can be used for simulating double crystal and triple crystal x-ray diffractometry experiments. The theory has been applied to experimental data obtained from diffractometry measurements of an epitaxial ZnTe layer with mosaic structure after several steps of chemical thinning. A good agreement of the theory with experiments has been achieved.
引用
收藏
页码：1736 / 1743
页数：8
相关论文
共 50 条
  • [1] X-ray triple-crystal diffractometry of defects in epitaxic layers
    [J]. Holy, V., 1600, Int Union of Crystallography, Copenhagen, Denmark (27):
  • [2] X-RAY TRIPLE-CRYSTAL DIFFRACTOMETRY OF DEFECTS IN EPITAXIAL LAYERS
    HOLY, V
    WOLF, K
    KASTNER, M
    STANZL, H
    GEBHARDT, W
    [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1994, 27 : 551 - 557
  • [3] Double- and triple-crystal X-ray diffractometry of microdefects in silicon
    Molodkin, V. B.
    Olikhovskii, S. I.
    Kyslovskyy, Ye. M.
    Len, E. G.
    Reshetnyk, O. V.
    Vladimirova, T. P.
    Lizunov, V. V.
    Lizunova, S. V.
    [J]. SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2010, 13 (04) : 353 - 356
  • [4] Characterization of porous InP(001) layers by triple-crystal X-ray diffractometry
    Lomov, A. A.
    Prokhorov, D. Yu.
    Imamov, R. M.
    Nohavica, D.
    Gladkov, P.
    [J]. CRYSTALLOGRAPHY REPORTS, 2006, 51 (05) : 754 - 760
  • [5] Characterization of porous InP(001) layers by triple-crystal X-ray diffractometry
    A. A. Lomov
    D. Yu. Prokhorov
    R. M. Imamov
    D. Nohavica
    P. Gladkov
    [J]. Crystallography Reports, 2006, 51 : 754 - 760
  • [6] Effect of defects in the monochromator on profiles of a triple-crystal x-ray diffractometry
    Kyslovskyy, E. M.
    Reshetnyk, O. V.
    Vladimirova, T. P.
    Molodkin, V. B.
    Olikhovskii, S. J.
    Sheludchenko, B. V.
    Seredenko, R. F.
    Skakunova, O. S.
    [J]. METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2007, 29 (05): : 701 - 710
  • [7] CHARACTERIZATION OF BORON IMPLANTED SILICON BY X-RAY TRIPLE-CRYSTAL DIFFRACTOMETRY
    ZAUMSEIL, P
    WINTER, U
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 120 (01): : 67 - 75
  • [8] X-ray diffraction peaks from misfit dislocations in double- and triple-crystal diffractometry
    Kaganer, Vladimir M.
    Shalimov, Artem
    Bak-Misiuk, Jadwiga
    Ploog, Klaus H.
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (08): : 2561 - 2566
  • [9] ON THE INCREASED SENSITIVITY OF X-RAY ROCKING CURVE MEASUREMENTS BY TRIPLE-CRYSTAL DIFFRACTOMETRY
    ZAUMSEIL, P
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 91 (01): : K31 - K33
  • [10] Effect of duration of thermal diffusion of boron on silicon structure studied by triple-crystal X-ray diffractometry
    Petrakov, AP
    Shilov, SV
    Zainulin, GG
    [J]. CRYSTALLOGRAPHY REPORTS, 2000, 45 (06) : 1013 - 1017
12345