INTERFACE CHEMISTRY OF METAL-GAAS SCHOTTKY-BARRIER CONTACTS

被引：182

作者：

WALDROP, JR

GRANT, RW

机构：

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 10期

关键词：

D O I：

10.1063/1.90642

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：630 / 632

页数：3

共 50 条

[21] WIDE-RANGE OF SCHOTTKY-BARRIER HEIGHT FOR METAL CONTACTS TO GAAS CONTROLLED BY SI INTERFACE LAYERS
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[22] METAL CONTACTS TO P-TYPE GAAS WITH LARGE SCHOTTKY-BARRIER HEIGHTS
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[23] ELECTRICAL-PROPERTIES OF IDEAL METAL CONTACTS TO GAAS - SCHOTTKY-BARRIER HEIGHT
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[24] ON THE LOCATION OF THE INTERFACE FERMI LEVEL IN METAL-SEMICONDUCTOR SCHOTTKY-BARRIER CONTACTS
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[25] COVALENT BONDING OF METAL ATOMS AT SCHOTTKY-BARRIER INTERFACE OF GAAS, GE, AND SI
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[29] FORMATION OF SCHOTTKY-BARRIER AT THE TM/GAAS(110) INTERFACE
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[30] SCHOTTKY-BARRIER MODULATION AT METAL CONTACTS TO CDS AND CDSE
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