共 50 条
- [21] PHOTON TRANSFER OF NON-EQUILIBRIUM CARRIERS IN A VARIABLE-GAP SEMICONDUCTOR AT RIGHT-ANGLES TO THE BAND-GAP GRADIENT SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (03): : 322 - 323
- [22] PHOTOLUMINESCENCE OF A VARIABLE-GAP SEMICONDUCTOR EXCITED BY SINUSOIDALLY MODULATED LIGHT SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (02): : 175 - 178
- [23] DIFFERENTIAL OPTOSPECTROMETRIC EFFECT IN A VARIABLE-GAP METAL SEMICONDUCTOR STRUCTURE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (12): : 1393 - 1397
- [24] PHOTON TRANSPORT OF NON-EQUILIBRIUM CARRIERS IN A VARIABLE-GAP SEMICONDUCTOR BY BAND IMPURITY LEVEL RADIATIVE RECOMBINATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (03): : 284 - 290
- [25] PHOTOCURRENT IN A VARIABLE-GAP STRUCTURE UNDER TRANSIENT EXCITATION CONDITIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (04): : 363 - 365
- [26] OSCILLATIONS IN THE SPECTRUM OF THE PHOTOCURRENT FLOWING IN A VARIABLE-GAP P-N STRUCTURE RESULTING FROM THE PHOTON DRIFT OF NONEQUILIBRIUM CARRIERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (06): : 708 - 709
- [28] CHARACTERISTICS OF RADIATIVE RECOMBINATION IN A VARIABLE-GAP SEMICONDUCTOR WITH A HIGH BAND-GAP GRADIENT SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (09): : 1099 - 1100
- [30] Oscillations of Polarization of Recombination Radiation of a Variable-Gap Semiconductor in a Magnetic Field JETP Letters, 2023, 118 : S18 - S20