Oscillations of Polarization of Recombination Radiation of a Variable-Gap Semiconductor in a Magnetic Field

被引：0

作者：

A. S. Volkov

A. I. Ekimov

S. A. Nikishin

V. I. Safarov

B. V. Tsarenkov

G. V. Tsarenkov

机构：

[1] Ioffe Institute,

来源：

JETP Letters | 2023年 / 118卷

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D O I：

暂无

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学科分类号：

摘要：

An oscillatory character of the variation of the degree of polarization is observed and is due to recombination of spin-polarized electrons in a variable-gap semiconductor in a magnetic field, as a function of the energy of the emitted quanta at a fixed magnetic field, and as a function of the magnetic field at a fixed quantum energy.

引用

页码：S18 / S20

共 50 条

[1] Oscillations of Polarization of Recombination Radiation of a Variable-Gap Semiconductor in a Magnetic Field
Volkov, A. S.
Ekimov, A. I.
Nikishin, S. A.
Safarov, V. I.
Tsarenkov, B. V.
Tsarenkov, G. V.
JETP LETTERS, 2023, 118 (SUPPL 1) : S18 - S20
[2] OSCILLATIONS OF POLARIZATION OF RECOMBINATION RADIATION OF A VARIABLE GAP SEMICONDUCTOR IN A MAGNETIC-FIELD
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JETP LETTERS, 1977, 25 (12) : 526 - 528
[3] CHAOTIC SPONTANEOUS OSCILLATIONS IN VARIABLE-GAP SEMICONDUCTOR STRUCTURES
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[4] CHARACTERISTICS OF RADIATIVE RECOMBINATION IN A VARIABLE-GAP SEMICONDUCTOR WITH A HIGH BAND-GAP GRADIENT
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[6] TRANSPORT OF NONEQUILIBRIUM CARRIERS IN A VARIABLE-GAP SEMICONDUCTOR UNDER IMPURITY RADIATIVE RECOMBINATION CONDITIONS
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[7] RECOMBINATION RADIATION EMITTED BY VARIABLE-GAP SEMICONDUCTORS UNDER THE MAGNETOCONCENTRATION EFFECT CONDITIONS
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[8] DETECTION OF NUCLEAR RADIATIONS WITH A VARIABLE-GAP SEMICONDUCTOR
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[9] PHOTON TRANSPORT OF CARRIERS IN A VARIABLE-GAP SEMICONDUCTOR
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[10] VARIABLE-GAP STRUCTURES IN A FERROELECTRIC SEMICONDUCTOR.
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