共 50 条
- [41] SPECIAL FEATURES OF CAPACITANCE-VOLTAGE CHARACTERISTICS OF VARIABLE-GAP METAL-INSULATOR SEMICONDUCTOR STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (06): : 650 - 652
- [42] ELECTRON-HOLE SCATTERING AND RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN SILICON AT HIGH EXCITATION RATES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (07): : 883 - 886
- [43] RESONANCE EXCITATION OF EXCITONS IN A SEMICONDUCTOR BY VARIABLE PULSE-LENGTH LASER KVANTOVAYA ELEKTRONIKA, 1975, 2 (10): : 2350 - 2353
- [45] Investigations of the kinetics of nonequilibrium carriers in a semiconductor by the average value of the photoconductivity under periodic optical excitation Semiconductors, 2014, 48 : 163 - 166
- [47] Band gap resonant femtosecond pulse propagation in nonlinear dispersive semiconductor waveguides JOURNAL OF NONLINEAR OPTICAL PHYSICS & MATERIALS, 2000, 9 (02): : 209 - 216
- [50] Lifetime of nonequilibrium charge carriers in the base of p-n-junction semiconductor diode at arbitrary injection levels Journal of Contemporary Physics (Armenian Academy of Sciences), 2008, 43 : 183 - 189