HIGH-FIELD TRANSPORT IN AN INGAAS-INP SUPERLATTICE GROWN BY CHEMICAL BEAM EPITAXY

被引：32
|
作者：
VUONG, THH [1 ]
TSUI, DC [1 ]
TSANG, WT [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 12期
关键词：
D O I：
10.1063/1.99248
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：981 / 983
页数：3
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