HIGH-FIELD TRANSPORT IN AN INGAAS-INP SUPERLATTICE GROWN BY CHEMICAL BEAM EPITAXY

被引：32
|
作者：
VUONG, THH [1 ]
TSUI, DC [1 ]
TSANG, WT [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 12期
关键词：
D O I：
10.1063/1.99248
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：981 / 983
页数：3
相关论文
共 50 条
  • [21] GROWTH OF INGAAS/INP OPTICAL MODULATOR STRUCTURES BY CHEMICAL BEAM EPITAXY
    CHIU, TH
    GOOSSEN, KW
    WILLIAMS, MD
    STORZ, FG
    APPLIED PHYSICS LETTERS, 1992, 60 (19) : 2365 - 2367
  • [22] Be diffusion in InGaAs/InP heterostructures grown by gas source molecular beam epitaxy
    Koumetz, S
    Ketata, K
    Ihaddadene, M
    Joubert, E
    Ketata, M
    Dubois, C
    JOURNAL OF CRYSTAL GROWTH, 2000, 220 (1-2) : 46 - 50
  • [23] InAlAs/InGaAs Pseudomorphic High Eelectron Mobility Transistors Grown by Molecular Beam Epitaxy on the InP Substrate
    Huang Jie
    Guo Tian-Yi
    Zhang Hai-Ying
    Xu Jing-Bo
    Fu Xiao-Jun
    Yang Hao
    Niu Jie-Bin
    CHINESE PHYSICS LETTERS, 2010, 27 (11)
  • [24] SEMIINSULATING INP GROWN BY CHEMICAL BEAM EPITAXY WITH PENTACARBONYLIRON DOPING
    WALKER, JD
    TSANG, WT
    APPLIED PHYSICS LETTERS, 1995, 66 (19) : 2558 - 2560
  • [25] Strained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy
    Woo, DH
    Oh, MS
    Koh, EH
    Yahng, JS
    Kim, SH
    Kim, YD
    MICROELECTRONIC ENGINEERING, 2000, 51-2 : 171 - 179
  • [26] SECONDARY ION MASS-SPECTROMETRY OF INGAAS/INP (100) MULTIPLE LAYERS GROWN BY CHEMICAL BEAM EPITAXY
    WILLIAMS, MD
    CHIU, TH
    STORZ, FG
    SHUNK, SC
    FERGUSON, JF
    APPLIED PHYSICS LETTERS, 1993, 62 (16) : 1884 - 1886
  • [27] High-field charge transport in InGaAs nanowires
    Rana, Rakesh
    Balaghi, Leila
    Fotev, Ivan
    Schneider, Harald
    Helm, Manfred
    Dimakis, Emmanouil
    Pashkin, Alexej
    2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2021,
  • [28] High-peformance InGaAs-InP APDs on GaAs
    Franco, DS
    Vaccaro, K
    Clark, WR
    Teynor, WA
    Dauplaise, HM
    Roland, M
    Krejca, B
    Lorenzo, JP
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (04) : 873 - 874
  • [29] InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy
    Teng, Teng
    Xu, Anhuai
    Ai, Likun
    Sun, Hao
    Qi, Ming
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 618 - 621
  • [30] The morphology of InP/InGaAs grown by molecular beam epitaxy onto V-grooved InP substrates
    Wang, J
    Robinson, BJ
    Thompson, DA
    Simmons, JG
    JOURNAL OF CRYSTAL GROWTH, 1997, 173 (3-4) : 307 - 314
12345