High-field charge transport in InGaAs nanowires

被引：0

作者：

Rana, Rakesh ^{[1
]}

Balaghi, Leila ^{[1
,2
]}

Fotev, Ivan ^{[1
,2
]}

Schneider, Harald ^{[1
]}

Helm, Manfred ^{[1
,2
]}

Dimakis, Emmanouil ^{[1
]}

Pashkin, Alexej ^{[1
]}

机构：

[1] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany

[2] Tech Univ Dresden, Inst Appl Phys, D-01062 Dresden, Germany

来源：

2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2021年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charge transport in GaAs/InGaAs nanowires is studied using high-field terahertz pulses. With increasing terahertz field, the plasmon resonance redshifts and loses its spectral weight. The results provide evidence for inhomogeneous intervalley scattering across the nanowire.

引用

页数：2

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